Several trials have been made to find out optimum settings for etching
with the gun.
Pieces of Si-wafers were used for testing. Each piece was covered with
about 50 nm of aluminum with the e-gun.
For reasonable etch-rate and maximum area coverage settings should be:
Beam energy [kV] |
Emission [mA] |
Scan voltage Area1 | Focus | Deflection |
Pressure [mBar] |
---|---|---|---|---|---|
3 | 30 | 3 (max) | min (7 o'clock) | X=center, Y=near max | 1.6×10-6 |
On the vertical transfer rod there is a marker, angle indicator.
For correct direction towards Ar-ion-gun, set to
150 degrees.
For correct direction towards e-gun, for deposition, set to
0 degrees.
Scan voltage Area1 | Focus |
Pressure [mBar] |
Etch depth [nm] |
Deposited Alu. [nm] | ||||||
---|---|---|---|---|---|---|---|---|---|---|
0 | minimum | 7×10-7 | 85 | 117 | 125 | 144 | 75 | 50 | 53 | 53 |
0.5 | minimum | 7×10-7 | 70-80 | 63-77 | 53-67 | 40 | 45 | 42 | ||
1.5 | minimum | 1.6×10-6 | 33-103 | 39-105 | 59-62 | 94-116 | 81-101 | 55 | 56 | 52 |
3 | minimum | 1.6×10-6 | 40-50 | 27 | 42 | 35 | 30 | 40 | 37 | 42 |
3 | 12 o'clock | 1.6×10-6 | 3 | 4 | 2 | 2 | 45 | 49 | 44 |