Operating parameters for Argon-ion-gun

 


Controller for Argon-ion gun, used for cleaning sample prior to deposition and for etching.

Several trials have been made to find out optimum settings for etching with the gun.
Pieces of Si-wafers were used for testing. Each piece was covered with about 50 nm of aluminum with the e-gun.

For reasonable etch-rate and maximum area coverage settings should be:
Beam energy
[kV]
Emission
[mA]
Scan voltage
Area1
Focus Deflection Pressure
[mBar]
3 30 3 (max) min (7 o'clock) X=center, Y=near max 1.6×10-6

 


Optimum settings of controller for good etch-rate and maximum area coverage,
focus at minimum,
X-deflection at center,
Y-deflection at near maximum.

On the vertical transfer rod there is a marker, angle indicator.
For correct direction towards Ar-ion-gun, set to 150 degrees.
For correct direction towards e-gun, for deposition, set to 0 degrees.

 


Marks on sample holder, one at the top for reference to mount sample holder always with this mark upwards.
One area near center indicating area of good etching at above settings.

Measurements for different settings

Beam energy = 3 kV
Emission = 30 mA
Deflection: X = center, Y = near max.
Time = 30 min.

Scan voltage
Area1
Focus Pressure
[mBar]
Etch depth
[nm]
Deposited Alu.
[nm]
0 minimum 7×10-7 85 117 125 144 75 50 53 53
0.5 minimum 7×10-7 70-80 63-77 53-67 40 45 42
1.5 minimum 1.6×10-6 33-103 39-105 59-62 94-116 81-101 55 56 52
3 minimum 1.6×10-6 40-50 27 42 35 30 40 37 42
3 12 o'clock 1.6×10-6 3 4 2 2   45 49 44


Adrian Iovan, Anders Liljeborg Nanostructure Physics, KTH.