• ICPCVD Oxford Instruments Plasmapro100 ICP300 deposition system with loadlock
• Standard processes available for:
  • Si-O
  • Si-N
  • Si-C
  • aSi
• Process gases: O₂, Ar, SiH₄, CH₄, H₂, TEOS, N₂
• Configured for 100 to 200mm wafers
• Standard deposition temperature 200 C, wide temperature range electrode -150 — 350 with He backside pressure
• Plasma power: ICP max 3000 W, table RF max 300 W
• Process pressure: ∼ 1 — 100 mTorr

General Rules:

• Do NOT run any etching processes
• Only single side polished Si carrier wafers, or full non-transparent wafers
• Only run recipes meant to run WITH a wafer from the "Automatic" tab
• Only run recipes meant to run WITHOUT a wafer from the "Manual" tab
• Standard deposition temperature is 200°C, do not change unless absolutely necessary

User Instructions (pdf)

Oxford Instruments Manuals restricted access.