Conventional Pattern Transfer and Single-Layer Lift-Off
This information courtesy of Micro Resist Technology, Berlin
Unique Features
- High wet and dry etch resistance
- Good thermal stability of the resist pattern
- Tunable pattern profile: vertical to undercut
- Aqueous alkaline development
- Easy to remove
- Based on safe solvents
- Resists available in a variety of viscosities
Applications
- Microelectronics and micro systems technology
- Mask for lift-off processes
- Etch mask for semiconductors and metals
- Well suitable for implantation
Technical Data
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Resist | ma-N 400 | µm | ma-N 1400 | µm |
| Film thickness | ma-N
405 ma-N 415 ma-N 420 ma-N 440 ma-N 490 |
0.5 1.5 2.0 4.1 7.5 |
ma-N
1405 ma-N 1407 ma-N 1410 ma-N 1420 |
0.5 0.7 1.0 2.0 |
|
| Spin coating / time |
3000 rpm, 30 s |
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| Spectral sensitivity |
300 - 380 nm |
300 - 410 nm |
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| Thermal stability | up to 110 °C, for metal evaporation |
up to 160 °C, for metal evaporation and sputtering |
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Process flow for standard and Lift-off Processes
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Examples
| ma-N
400 Series |
ma-N
1400 Series |
 |
 |
| tD
90 s, 0 µm undercut |
tD
65 s, 0.6 µm undercut |
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 |
| tD
100 s, 0.5 µm undercut |
tD
80 s, 0.8 µm undercut |
 |
 |
| tD
120 s, 1.0 µm undercut |
tD
100 s, 1.7 µm undercut |
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| tD
140 s, 1.5 µm undercut |
tD
120 s, 2.1 µm undercut |
Development
ma-N 1400 is developed in aqueous alkaline
solutions. ma-D 533/S (metal ion free) by micro
resist technology GmbH is provided for this
process.
ma-N 400 is developed in aqueous alkaline solutions. ma-D 332/S by micro
resist technology GmbH is provided for this
process.
ma-N 405 is developed in aqueous alkaline solutions. ma-D 331/S by micro
resist technology GmbH is provided for this
process.
Removal
ma-N 1400 / ma-N 400 can be removed residue-free
after the micro-technological fabrication process.
We recommend our remover mr-Rem 660.
Environmental and health protection
All harmful organic solvents in resist and developer have been substituted by safer solvents.