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courtesy of Micro Resist Technology Negative Tone Photoresists - Overview |
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ma-N 2400 | ma-N 400 | ma-N 1400 |
ma-N
2403 ma-N 2405 ma-N 2410 |
ma-N
405 ma-N 410 ma-N 420 ma-N 440 ma-N 490 |
ma-N
1407 ma-N 1410 ma-N 1420 |
Characteristics | ||
DUV and e-beam sensitive | UV-sensitive | UV-sensitive/ i-line |
high alkaline, etch, plasma and plating
bath stability, |
Recommended
Exposure Range |
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248 nm, e-beam | 320 / 365 nm | 365 / 405 nm |
Film
Thickness |
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0.2 - 1.6 µm | 0.5 - 9.0 µm | 0.5 - 2.5 µm |
Resolution |
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to
0.2 µm (DUV) to 80 nm (e-beam) |
0.4 - 4.0 µm | 0.5 µm - 1.0 |
Process
Chemicals |
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Thinners | ||
ma-T 1024 | ma-T 1044 | ma-T 1014 |
Developers | ||
ma-D 525 | ma-D
331s ma-D 332s |
ma-D 533s |
Developers | ma-D 331(s) / ma-D 335(s) / ma-D 525 | inorganic alkaline developer | |
ma-D 532(s) / ma-D533(s) | inorganic alkaline developer, metal-ion-free | ||
Our developers are ready-to-use! | |||
Quantity of delivery | photoresists | 0.25l / 0.5l / 1.0l / 2.5l | |
thinners | 0.5l | ||
developers | 1.0l / 5.0l |
Our Offer:
No extra charge for the delivery of
small quantities (>= 500 ml)!