Web page courtesy of Micro Resist Technology
Negative Tone Photoresists - Overview
   
ma-N 2400 ma-N 400 ma-N 1400
ma-N 2403
ma-N 2405
ma-N 2410
ma-N 405
ma-N 410
ma-N 420
ma-N 440
ma-N 490
ma-N 1407
ma-N 1410
ma-N 1420


Characteristics    
DUV and e-beam sensitive UV-sensitive UV-sensitive/ i-line

high alkaline, etch, plasma and plating bath stability,
aqueous-alkaline development,
variable edge profiles nearly vertical to high undercut easily adjustable


 

Recommended Exposure Range
   
248 nm, e-beam 320 / 365 nm 365 / 405 nm

 

Film Thickness
   
0.2 - 1.6 µm 0.5 - 9.0 µm 0.5 - 2.5 µm

 

Resolution
   
to 0.2 µm (DUV)
to 80 nm (e-beam)
0.4 - 4.0 µm 0.5 µm - 1.0


Process Chemicals
   
Thinners    
ma-T 1024 ma-T 1044 ma-T 1014

 

Developers    
ma-D 525 ma-D 331s
ma-D 332s
ma-D 533s

 

Developers ma-D 331(s) / ma-D 335(s) / ma-D 525 inorganic alkaline developer
ma-D 532(s) / ma-D533(s) inorganic alkaline developer, metal-ion-free
Our developers are ready-to-use!
Quantity of delivery photoresists 0.25l / 0.5l / 1.0l / 2.5l
thinners 0.5l
developers 1.0l / 5.0l

Our Offer: No extra charge for the delivery of
small quantities (>= 500 ml)!


----back to top----Home----Products----Contact----


© 2005 by micro resist technology