Oxford Instruments Plasmapro 100 Cobra 300 dry etching system with loadlock.

Process gases O₂, Ar, CF₄, CHF₃, SF₆, C₄F₈, N₂.

Configured for 4 inch wafers (capable of up to 8inch with reconfiguration), smaller pieces require mounting on 4 inch sapphire carriers

Wide temperature range electrode -150° C up to 400° C with He backside pressure

Julabo chiller for -20 up to +70° C operation

Plasma power: ICP max 3000 W, table RF max 600 W

Process pressure: 1-250 mTorr

Usage rules and instructions

Manufacturers manual (limited access).

Manufacturers Service manual (limited access).

Poster - comparison, etching different resists.

Electric schematic (Password protected).

Training notes (Password protected).

Basic plasma etch with examples (Password protected).

Etch processing setup and tips / trouble shooting (Password protected).

Oxford tutorial for KTH_PP100-Cobra (Password protected).

Plasma physics essentials (Password protected).