Example process using negative resist maN-2403

Resist: maN-2403

Spin: 4000 rpm/min, 1 min
Bake: 90°C,  1 min
Resist thickness: 250 -280 nm

Voyager Column Mode: 60 microns LC
Dose ebeam: 170 µC/cm2
Step size: 4 nm
Total exposure time:  5 min 25 s

Developer: ma-D 525, 1 min
Rince with water: 1 min

Adrian Iovan