Reactive Ion Etch (RIE)
with Inductive Coupled Plasma (ICP)
Operating Manual
System and computer
Here is the system seen from the side with the controlling computer beside
it.
All parameters are controlled via the computer, these parameters are
typically:
- Which process gas
- Pressure (mTorrs)
- Gas flow (sccm, standard cubic centimeter per minute)
- Etch time
- RIE RF (radio frequency) power
- ICP RF power
- Initial pressure to be reached before start of etch
Back to Introduction
Anders Liljeborg,
Nanostructure Physics, KTH.